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| BCX 41 BSS 64 NPN Silicon AF and Switching Transistor High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 42, BSS 63 (PNP) q BCX 41 BSS 64 Type BCX 41 BSS 64 Marking EKs AMs Ordering Code (tape and reel) Q62702-C1659 Q62702-S535 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 80 120 5 Values BSS 64 BCX 41 125 125 5 800 1 100 200 330 150 - 65 ... + 150 Unit V mA A mA mW C 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 41 BSS 64 Electrical Characteristics at TA = 25 C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 A Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 C VCB = 100 V, TA = 150 C Collector cutoff current VCE = 100 V TA = 85 C TA = 125 C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 4 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 20 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA Base-emitter saturation voltage1) IC = 300 mA, IB = 30 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t 300 s, D = 2 % Semiconductor Group 2 Unit max. V typ. V(BR)CE0 BSS 64 BCX 41 V(BR)CB0 BSS 64 BCX 41 V(BR)EB0 ICB0 BSS 64 BCX 41 BSS 64 BCX 41 ICE0 BCX 41 BCX 41 IEB0 hFE BCX 41 BSS 64 BSS 64 BSS 64 BSS 64 BCX 41 BCX 41 VCEsat BCX 41 BSS 64 BSS 64 VBEsat BCX 41 fT Cobo - - 100 12 - - - - - - - - - - 0.9 0.7 3.0 1.4 25 - 20 - - 63 40 - 60 80 80 55 - - - - - - - - - - - - - - - 10 75 100 - - - - - - - - 100 100 20 20 120 125 5 - - - - - - 80 125 - - - - nA nA A A A nA - V MHz pF BCX 41 BSS 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (Ic) VCE = 5 V Semiconductor Group 3 BCX 41 BSS 64 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 |
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